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Investigation of the structure and properties of sulfur-doped expitaxial gallium arsenide layers

✍ Scribed by M. D. Vilisova; O. M. Ivleva; L. M. Krasil'nikova; L. P. Porokhovnichenko; M. P. Yakubenya

Book ID
112428427
Publisher
Springer
Year
1985
Tongue
English
Weight
711 KB
Volume
28
Category
Article
ISSN
1573-9228

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## Abstract Electron microscopy was used to study non‐doped GaAs layers obtained in a chloride system Ga‐AsCl~3~‐H~2~. Electron concentrations is 10^13^–10^15^ cm^βˆ’3^, mobility at liquid nitrogen temprature reaches 200000 cm^2^/v. sec. It is shown that a fraction of the growth surface taken with (1