Investigation of the dosage effect on the activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films

Effects of deposition pressure on the mi

Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition

✍ Peiqing Luo; Zhibin Zhou; Youjie Li; Shuquan Lin; Xiaoming Dou; Rongqiang Cui 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 474 KB

We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not