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Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design

✍ Scribed by S. Ghosh; B. Grandchamp; G.A. Koné; F. Marc; C. Maneux; T. Zimmer; V. Nodjiadjim; M. Riet; J.-Y. Dupuy; J. Godin


Book ID
113800561
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
678 KB
Volume
51
Category
Article
ISSN
0026-2714

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