Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy

✍ Scribed by Reithmaier, J.-P.; Cerva, H.; Lösch, R.

• Book ID: 120453586
• Publisher: American Institute of Physics
• Year: 1989
• Tongue: English
• Weight: 623 KB
• Volume: 54
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.100830