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Investigation of relation between Ga concentration and defect levels of Al/Cu(In,Ga)Se2 Schottky junctions using admittance spectroscopy

✍ Scribed by T. Sakurai; N. Ishida; S. Ishizuka; K. Matsubara; K. Sakurai; A. Yamada; G.K. Paul; K. Akimoto; S. Niki


Book ID
108289579
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
209 KB
Volume
515
Category
Article
ISSN
0040-6090

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