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Investigation of radiation-induced defects in silicon p-n junctions: M. G. Buehier. Rep-03-72-106 AFCRL-72-0578. Texas Instruments Inc., Dallas U.S.A. 70 pp. September (1973)


Book ID
103273530
Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
107 KB
Volume
12
Category
Article
ISSN
0026-2714

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