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Investigation of radiation damage in garnets produced by implantation of rare earth ions and its annealing

✍ Scribed by A. Steinecke; D. Kollewe

Book ID
113285875
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
356 KB
Volume
85
Category
Article
ISSN
0168-583X

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 Γ— 10^15^ at/cm^2^ is reached, a highly disordered β€˜nanocry