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Investigation of Precipitation in Czochralski Silicon by Phonon Spectroscopy

✍ Scribed by Schrag, G. ;Rebmann, M. ;Wurster, C. ;Zeller, F. ;Lassmann, K. ;Eisenmenger, W.


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
263 KB
Volume
168
Category
Article
ISSN
0031-8965

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In order to investigate the gap states caused by the oxygen precipitation, we performed deep level transient spectroscopy measurements on silicon crystals containing various types of oxygen precipitates. For all types of the oxygen precipitates, a new signal in the gap-state density was observed at