Surface and interface of GaAsSI-GaAs str
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K Jezierski; P Sitarek; J Misiewicz; M Panek; B Εciana; R Korbutowicz; M TΕaczaΕ
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Article
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1997
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Elsevier Science
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English
β 406 KB
## Epitaxial layers of GaAs were grown by NlOCVD technique on St-GaAs substrates. Photoreflectance (PR) spectra were measured at room temperature for energies in the vicinity of the E0 critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Two experimental methods for the further