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Investigation of microstructure and V-defect formation in InxGa1−xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition

✍ Scribed by M. C. Johnson; Z. Liliental-Weber; D. N. Zakharov; D. E. Mccready; R. J. Jorgenson; J. Wu; W. Shan; E. D. Bourret-Courchesne


Publisher
Springer US
Year
2005
Tongue
English
Weight
363 KB
Volume
34
Category
Article
ISSN
0361-5235

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