✦ LIBER ✦
Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model
✍ Scribed by P Ellrodt; W Brockerhoff; F.J Tegude
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 618 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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