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Investigation of Ion Implanted Silicon by Electroreflectance Spectroscopy

✍ Scribed by Gavrilenko, V. I. ;Klyui, N. I. ;Litovchenko, V. G. ;Romanyuk, B. N.

Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
401 KB
Volume
112
Category
Article
ISSN
0031-8965

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The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.