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Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm

✍ Scribed by H.D.B. Gottlob; T. Echtermeyer; T. Mollenhauer; J.K. Efavi; M. Schmidt; T. Wahlbrink; M.C. Lemme; H. Kurz


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
235 KB
Volume
9
Category
Article
ISSN
1369-8001

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