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Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching

✍ Scribed by H.W. Huang; C.H. Lin; C.C. Yu; K.Y. Lee; B.D. Lee; H.C. Kuo; S.Y. Kuo; K.M. Leung; S.C. Wang


Book ID
108215583
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
1005 KB
Volume
151
Category
Article
ISSN
0921-5107

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