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Investigation of deep levels of AsGaand GaAsantistructural defects and InAsand SbGaheteroantistructural defects in GaAs using a 4×4×4 expanded unit cell technique

✍ Scribed by S. N. Grinyaev; V. A. Chaldyshev


Book ID
112750055
Publisher
Springer
Year
1996
Tongue
English
Weight
547 KB
Volume
39
Category
Article
ISSN
1573-9228

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