Investigation of charging/discharging phenomena in nano-crystal memories

✍ Scribed by B. De Salvo; G. Ghibaudo; G. Pananakakis; B. Guillaumot; T. Baron

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 550 KB
• Volume: 28
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2000.0931

✦ Synopsis

In this work we will give a detailed account of the charging/discharging phenomena occurring in semiconductor nano-crystal memories. Memory transfer characteristics and write/ erase transient characteristics are studied for devices with different technological parameters. Experimental results are explained by means of a semi-classical model, based on a modified current continuity approach. This model depicts the effect of the tunnel/top dielectric thickness, dot recovered area and programming voltage on the device performance.