Investigation of Ce-doped Gd2Si2O7 as a scintillator material
β Scribed by Sohan Kawamura; Junichi H. Kaneko; Mikio Higuchi; Fumiyuki Fujita; Akira Homma; Jun Haruna; Shohei Saeki; Kazuhisa Kurashige; Hiroyuki Ishibashi; Michihiro Furusaka
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 176 KB
- Volume
- 583
- Category
- Article
- ISSN
- 0168-9002
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## Abstract Gd~4~Si~2~O~7~N~2~, a new oxynitride, has been prepared and the luminescent properties of the Ce^3+^, Tb^3+^ or Dy^3+^ doped product have been studied. XRD results indicate that Gd~4~Si~2~O~7~N~2~ is isostructural with Tb~4~Si~2~N~2~O~7~ and belongs to the monoclinic system. The SEM ima
electrical conductivity of (Nd 1-x Gd x ) 2 (Ce 1-x Zr x ) 2 O 7 ceramics increases with temperature in the range 623-1,173 K following an Arrhenius law. At identical temperature levels, the measured electrical conductivity of (Nd 1-x Gd x ) 2 (Ce 1-x Zr x ) 2 O 7 ceramics varies with doping differe