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Investigation of carrier transport in a system of undoped quantum wells under pulsed excitation

✍ Scribed by A. M. Georgievskii; V. A. Solov’ev; B. S. Ryvkin; N. A. Strugov; E. Yu. Kotel’nikov; V. E. Tokranov; A. Ya. Shik


Book ID
110119632
Publisher
Springer
Year
1997
Tongue
English
Weight
156 KB
Volume
31
Category
Article
ISSN
1063-7826

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Character and dynamics of charge carrier energy relaxation and recombination are disclosed in detail by tlme delayed and time resolved cathodoluminescence experiments of undoped and doped GaAs/Gao.6AI 0 4As multiple quantum wells with thickness 5 nm < L z < 11 nm. At all temperatures up to room temp