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Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III–V heterostructure underlap DG MOSFET

✍ Scribed by Hemant Pardeshi; Sudhansu Kumar Pati; Godwin Raj; N Mohankumar; Chandan Kumar Sarkar


Book ID
119347788
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
925 KB
Volume
46
Category
Article
ISSN
1386-9477

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