In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al 2 O 3 /5 nm La 2 O 3 /5 nm Al 2 O 3 and 15 nm Al 2 O 3 /5 nm La 2 O 3 /5, 7.5, and 10 nm Al 2 O 3 multi-stack films,
β¦ LIBER β¦
Investigation of Al2O3 film-thickness by tunnel emission and capacitance measurements
β Scribed by K.H. Gundlach; G. Heldmann
- Publisher
- Elsevier Science
- Year
- 1967
- Tongue
- English
- Weight
- 315 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0038-1098
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