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Inversion and accumulation layer formation at elevated temperatures in n-type GaAs-anodic oxide MIS devices

✍ Scribed by S. Varadarajan; M.A. Littlejohn; J.R. Hauser


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
464 KB
Volume
56
Category
Article
ISSN
0040-6090

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