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Inverse-photoemission study of unoccupied electronic states in Ge and Si: Bulk energy bands

✍ Scribed by Straub, D.; Ley, L.; Himpsel, F. J.


Book ID
118132969
Publisher
The American Physical Society
Year
1986
Tongue
English
Weight
688 KB
Volume
33
Category
Article
ISSN
1098-0121

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Growth of a Ge/Si/Ge (100) heterostructu
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We present photoemission and low energy electron diffraction (LEED) results obtained on a Ge/Si/Gc(100) heterostructure grown by very low pressure chemical vapour deposition of disilane (Si2H6) or germane (GeH4) on a Ge(100) 2 Γ— 1 substrate. Both gases were catalytically dissociated at a hot tungste