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Intrinsic photoluminescence of pure β-ThBr4 single crystal

✍ Scribed by E. Simoni; S. Hubert; M. Genet

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
552 KB
Volume
62
Category
Article
ISSN
0022-2313

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## Abstract In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an in situ deposited In seeding layer, nearly defect‐free, non‐tapered InN nanowires are grown directly on Si(111) substrates by molecular beam epitaxy. The photoluminescence emission of a singl