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Intrinsic limit to low-temperature mobility in semiconductor structures with two-dimensional electrons

✍ Scribed by Shangina, E L


Book ID
115532610
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
390 KB
Volume
27
Category
Article
ISSN
0268-1242

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A theory is developed of the density of states (DOS) of the two-dimensional electron gas (2D EG) in semiconductor heterostructures, taking into account the effect of disorder caused by some random field existing in the sample. For a smooth random field, the calculation is carried out within its Gaus