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Intrinsic high-frequency characteristics of tunneling heterostructure devices

โœ Scribed by Fernando, Chenjing L.; Frensley, William R.

Book ID
118185665
Publisher
The American Physical Society
Year
1995
Tongue
English
Weight
675 KB
Volume
52
Category
Article
ISSN
1098-0121

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We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for \(\mathrm{GaAs} /