Intrinsic dipole–dipole excitonic coupling in GaN quantum dots: application to quantum information processing
✍ Scribed by S De Rinaldis; R Rinaldi; R Cingolani; I D'Amico; E Biolatti; F Rossi
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 111 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
✦ Synopsis
We propose to use GaN quantum dots as building blocks of a solid state quantum bit. The existence of a strong built in electric ÿeld induced by the spontaneous polarization and by the piezoelectricity is exploited to entangle the states in coupled quantum dots without external ÿelds. The electro-optical response of the coupled GaN quantum dots is investigated theoretically by means of a realistic description of Coulomb-correlated few-electron states, obtained via a direct-diagonalization approach. We show that the built-in electric ÿeld in nitrides induces intrinsic dipole-dipole coupling of the order of some milli-electron-volt and thus allows the implementation of quantum information processing. As an example we will implement the quantum XOR gate. Quantum operations are achieved by a sequence of femtosecond multicolor laser pulses. ? 2002 Published by Elsevier Science B.V.