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Interwell excitons in GaAs superlattices

โœ Scribed by D. Birkedal; K. El Sayed; G. Sanders; C. Spiegelberg; V.G. Lyssenko; C. Stanton; J.M. Hvam; V.B. Timofeev; M. Bayer

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
135 KB
Volume
21
Category
Article
ISSN
0749-6036

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โœฆ Synopsis

The formation of spatially indirect excitons in superlattices with narrow minibands is investigated experimentally. The interwell exciton is similar to the first Wannier-Stark localized exciton of an electrically biased superlattice. However, in the present case the localization is mediated by the Coulomb interaction of the electron and the hole without external fields.

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โœ DW Peggs; PE Simmonds; MS Skolnick; GW Smith; DM Whittaker; AN Forshaw; DJ Mowbr ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 166 KB

Longitudinal optic (LO) phonon assisted indirect exciton creation ( \(\left.\mathrm{X}_{\mathrm{LO}}\right)\), hot carrier relaxation ((e-h) \()_{\mathrm{LO}}\) ) and Raman scattering phenomena are reported in the optical spectra of GaAs-AlGaAs superlattices. Structures of the same dimensions both w