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Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density

✍ Scribed by Zhou, X L; Chen, Y H; Jia, C H; Ye, X L; Xu, Bo; Wang, Z G


Book ID
127376439
Publisher
Institute of Physics
Year
2010
Tongue
English
Weight
767 KB
Volume
43
Category
Article
ISSN
0022-3727

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We have investigated temperature dependent photoluminescence of both buried and surface selfassembled InAs/GaAs quantum dots with an areal density up to $ 10 11 /cm 2 . Different from the buried quantum dots, the peak energy of surface quantum dots shows a blueshift relative to the bulk material var