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Internal fields in InN/GaN quantum dots: Geometry dependence and competing effects on the electronic structure

✍ Scribed by K. Yalavarthi; V. Gaddipati; S. Ahmed

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 729 KB
Volume: 43
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2011.02.007

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