✦ LIBER ✦

Interlayer methods for reducing the dislocation density in gallium nitride

✍ Scribed by M.J. Kappers; M.A. Moram; Y. Zhang; M.E. Vickers; Z.H. Barber; C.J. Humphreys

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 835 KB
Volume: 401-402
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2007.08.170

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Time-path method for the evolution of re

Time-path method for the evolution of reduced density matrices in nonequilibrium systems

✍ A.G. Hall 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 397 KB

A Study of Bisazido(dimethylamino-propyl

A Study of Bisazido(dimethylamino-propyl)gallium as a Precursor for the OMVPE of Gallium Nitride Thin Films in a Cold-Wall Reactor System under Reduced Pressure

✍ A. Devi; W. Rogge; A. Wohlfart; F. Hipler; H. W. Becker; R. A. Fischer 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 674 KB

Application of the Monte Carlo Method fo

Application of the Monte Carlo Method for the Calculation of Electrical Properties, in both Wurtzite and Zinc Blende Phases, of Gallium Nitride

✍ A. Hamdoune; N.-E. Chabane Sari 📂 Article 📅 2009 🏛 Elsevier 🌐 English ⚖ 300 KB

The gallium nitride (GaN) presents very good mechanical, chemical and physical properties, as high velocities. These properties make it more attractive for high power, temperature and frequency electronic applications. In this paper, the main electrical properties of GaN are first presented; then it