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Interimpurity light absorption in thin wires of III-V-type semiconductors

✍ Scribed by A. P. Dzhotyan; É. M. Kazaryan; A. S. Chirkinyan

Book ID: 110119748
Publisher: Springer
Year: 1998
Tongue: English
Weight: 105 KB
Volume: 32
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1187369

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## Abstract Deep straight macropores in n‐type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO~4~ mixed with H~2~SO~4~ and an optimized process that begins at the bottom