Interfacial reactions of thin titanium aluminide films with Al2O3 films and with sapphire
β Scribed by M. Nathan; C.R. Anderson; J.S. Ahearn
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 718 KB
- Volume
- 162
- Category
- Article
- ISSN
- 0921-5093
No coin nor oath required. For personal study only.
β¦ Synopsis
Interracial reactions between thin (approximately 500 A) titanium aluminide films with 30, 50 and 70 at.% aluminum, and both electron-beam evaporated A1203 and sapphire, were investigated with transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS) at 700-900 Β°C. Single-phase aluminides are formed by reacting thin multilayered Ti/A1 stacks at temperatures below 700 Β°C. All three aluminides react with alumina at 900 Β°C after 100 s. The reaction involves in-diffusion of oxygen into, and out-diffusion of aluminum from the aluminide, resulting in titanium enrichment of the aluminide and the formation of titanium oxides. The reaction is spatially limited. The observed reactivity of aluminum-rich aluminides with AI203 contrasts with all previously reported bulk results, and indicates that on a nanometer scale, titanium aluminides are chemically incompatible with AI203.
π SIMILAR VOLUMES
Epitaxial CeO2 buffer layers and YBa2Cu307\_~ thin films have been grown in situ on (1].02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2 Cu3 O7-6 and A12 03 as determined by depth profiling using x-ray photoelectron spectroscopy. Th
HfO 2 gate dielectric films with a blocking layer of Al 2 O 3 inserted between HfO 2 layer and Si layer (HfO 2 /Si) were treated with rapid thermal annealing process at 700 . The interfacial structure and electrical properties were reported. The results of X-ray photoelectron spectroscopy showed tha