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Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

✍ Scribed by W. B. Chen; A. Chin


Book ID
123616067
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
507 KB
Volume
95
Category
Article
ISSN
0003-6951

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