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Interface phonons in GaAs/AlAs superlattices studied by micro-raman spectroscopy

✍ Scribed by A. Huber; T. Egeler; W. Ettmüller; H. Rothfritz; G. Tränkle; G. Abstreiter


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
284 KB
Volume
9
Category
Article
ISSN
0749-6036

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Measurements" by Raman spectroscopy, oblique incidence far-IR power reflection spectroscopy and attenuated total reflection spectroscopy have been used to study bulk and surface phonons and plasmons in semiconductor superlattices and multiple quantum wells. Raman spectroscopy has been used to invest