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Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As

✍ Scribed by Bringans, R. D.; Olmstead, M. A.; Uhrberg, R. I. G.; Bachrach, R. Z.

Book ID: 125454296
Publisher: The American Physical Society
Year: 1987
Tongue: English
Weight: 880 KB
Volume: 36
Category: Article
ISSN: 1098-0121
DOI: 10.1103/physrevb.36.9569

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✍ Roucka, Radek; Tolle, John; Forrest, Brandon; Kouvetakis, John; D’Costa, Vijay R 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 630 KB