A theoretical study of the structural and electronic properties of the interfaces between a set of III-V compound semiconductors of technological interest and their native oxides is reported. First-principles techniques have been applied to model the reaction of oxidation of the GaAs(0 0 1)-b2(2 Â 4
Interface electronic structures of zinc oxide and metals: First-principle study
✍ Scribed by Kamiya, T. ;Tajima, K. ;Nomura, K. ;Yanagi, Hiroshi ;Hosono, H.
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 436 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Electronic structures and carrier transport properties were studied based on ab‐initio calculations for Au/ZnO/Au and Mg/ZnO/Mg two‐probe models. Quantum‐mechanically stable structures were obtained by density functional calculations. Electron transmission spectra and current–voltage characteristics were calculated based on a non‐equilibrium Green function method with the relaxed structures. It was found that the electronic structures of the idealized models were a Schottky contact for the Au/ZnO/Au interface and an ohmic contact for the Mg/ZnO/Mg interface. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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