Growth Rate Effects during Indium-Antimo
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T. A. Campbell; J. N. Koster
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Article
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1999
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John Wiley and Sons
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English
β 206 KB
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Local interface velocities are tracked radioscopically in the III-V semiconductor compound indiumantimony grown in a vertical Bridgman-Stockbarger furnace. Comparisons are made of interface velocities from five different compositions (40, 49, 50, 55, and 60 at.% Sb). Under specific growth conditions