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Interface Dynamics during Indium Antimonide Crystal Growth

✍ Scribed by T. A. Campbel; J. N. Koster


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
365 KB
Volume
33
Category
Article
ISSN
0232-1300

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Local interface velocities are tracked radioscopically in the III-V semiconductor compound indiumantimony grown in a vertical Bridgman-Stockbarger furnace. Comparisons are made of interface velocities from five different compositions (40, 49, 50, 55, and 60 at.% Sb). Under specific growth conditions