Interface Controlled Materials (RUEHLE:INTERFACE CONT.MAT O-BK) || IV-VI and V-VI Materials for Thermoelectric Nanostructures

✍ Scribed by Rühle, M.; Gleiter, H.

• Book ID: 101394452
• Publisher: Wiley-VCH Verlag GmbH & Co. KGaA
• Year: 2005
• Weight: 426 KB
• Category: Article
• ISBN: 352760622X
• DOI: 10.1002/352760622x.ch11

✦ Synopsis

There is growing evidence for an enhancement of the thermoelectric figure of merit ZT in low dimensional structures. Thermoelectric nanostructures based on such materials could have a series of applications in sensors, coolers and low power energy conversion systems. Basic thermoelectric properties of Pb 1-x Sr x (Se,Te) epitaxial films grown by molecular beam epitaxy (MBE) on BaF 2 (111) substrates are presented. The structural quality is studied by high resolution X-ray diffraction (XRD). For multi quantum well (MQW) films XRD and atomic force microscopy (AFM) analysis show high structural perfection. Measurements of transport properties indicate an enhancement of the 2D-power factor σS 2 . High quality Bi 2 Te 3 -layers can also be prepared on BaF 2 (111) substrates using MBE. Multiple stacks of epitaxial IV-VI / V-VI layers are made. Growth characteristics were analyzed by RHEED, AFM, SEM and SIMS.