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Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy

✍ Scribed by R. Beyer; J. von Borany; H. Burghardt


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
322 KB
Volume
86
Category
Article
ISSN
0167-9317

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