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Interdevice isolation characteristics for design and fabrication of 60-GHz WPAN SoCs

✍ Scribed by Sungil Kim; Chul-Wook Lee; Suck-Won Yun; Kwang-Yong Kang; Hai-Young Lee


Book ID
102516081
Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
285 KB
Volume
50
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

The high interdevice isolation levels is one of the key technologies in the design and fabrication of 60‐GHz WPAN SoC. To obtain proper interdevice isolation levels, we have analyzed and measured substrate coupling effects with various isolation techniques like a trench and implant structure. From the analyzed and measured results, the feasibility of the implant has confirmed to be applicable to the mm‐wave SoC, and also derived an equivalent circuit form these results, which can be helpful to the design and fabrication of the 60‐GHz WPAN SoC. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1699–1702, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23470