Interaction of megaelectronvolt ion beams with silicon: Amorphization, recrystallization and diffusion

✍ Scribed by J.M. Poate

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 576 KB
• Volume: 2
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90074-3

✦ Synopsis

Three areas will be reviewed where the use of megaelectronvolt ion beams has contributed to the understanding of the properties of amorphous silicon: (1) thermodynamic and relaxation effects; (2) thermal and radiation-enhanced diffusion; (3) interracial segregation.

trating on the segregation and diffusion of dopants at the moving interface. The segregation phenomena demonstrate some of the features of classic segregation at the liquid-solid interface. The mobility or diffusivity of the dopants at the interface is considerably enhanced by the radiation.