## Abstract The faceting of grain boundaries (GB) under annealing in phosphorusโdoped polysilicon films, produced by lowโpressure chemical vapor deposition, has been investigated by transmission electron microscopy. It has been shown that the facet types and facet density depend on annealing temper
โฆ LIBER โฆ
Interaction of cleavage ridges with grain boundaries in polysilicon films
โ Scribed by J. Chen; Y. Qiao
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 248 KB
- Volume
- 91
- Category
- Article
- ISSN
- 1432-0630
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## Abstract The correlation of TEM imaging and microโphotoluminescence studies of electron irradiated areas of diamond, developed in Bristol, has been extended to new optical centres and defects. In this paper, we show new evidence of the interaction of point defects with dislocations and grain bou