We present a model for calculating the interaction energy of an ionic crystal and a spherical dielectric tip, applicable to experiments in scanning force microscopy. The repulsive energy is introduced by performing a pairwise summation between the atoms ofthe probe and each atom of the substrate. Th
β¦ LIBER β¦
Interaction forces between a tungsten tip and methylated SiO2 surfaces studied with scanning force microscopy
β Scribed by L. Olsson; P. Tengvall; R. Wigren; R. Erlandsson
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 518 KB
- Volume
- 42-44
- Category
- Article
- ISSN
- 0304-3991
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Interaction between a dielectric tip and
β
D. Van Labeke; B. Labani; C. Girard
π
Article
π
1989
π
Elsevier Science
π
English
β 402 KB
A Study of Hydrophobic Interactions betw
β
M. Mantel; Y.I. Rabinovich; J.P. Wightman; R.-H. Yoon
π
Article
π
1995
π
Elsevier Science
π
English
β 640 KB
Reliability of SiO2 and high-k gate insu
β
M. Porti; L. Aguilera; X. Blasco; M. NafrΔ±Β΄a; X. Aymerich
π
Article
π
2007
π
Elsevier Science
π
English
β 357 KB
In this work, a conductive atomic force microscope (C-AFM) is used to study the reliability (degradation and breakdown, BD) of SiO 2 and high-k dielectrics. The effect of a current limit on the post-BD SiO 2 electrical properties at the nanoscale is discussed. In particular, the impact of a current
Self-consistent study of the electromagn
β
X. Bouju; C. Girard; B. Labani
π
Article
π
1992
π
Elsevier Science
π
English
β 466 KB