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Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

โœ Scribed by Z. M. Saparniyazova; M. K. Bakhadyrkhanov; O. E. Sattarov; Kh. M. Iliev; K. A. Ismailov; N. Norkulov; D. Zh. Asanov


Book ID
114989185
Publisher
SP MAIK Nauka/Interperiodica
Year
2012
Tongue
English
Weight
141 KB
Volume
48
Category
Article
ISSN
0020-1685

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We have studied, by means of B diffusion analyses, the effect of F on the point defect density in preamorphized Si. Through molecular beam epitaxy (MBE) Si samples containing a special B multi-spike were grown. These samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen te