We have studied, by means of B diffusion analyses, the effect of F on the point defect density in preamorphized Si. Through molecular beam epitaxy (MBE) Si samples containing a special B multi-spike were grown. These samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen te
Interaction between Iron and Point Defects in Silicon
โ Scribed by Kustov, V. E. ;Bagrin, Y. U. N. ;Tripachko, N. A. ;Shakhovtsov, V. I. ;Spinar, L. I.
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 259 KB
- Volume
- 129
- Category
- Article
- ISSN
- 0031-8965
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