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Intensity variations in the near-band-edge recombination of GaP epitaxial layers, grown on (111) and (001) oriented substrates, as observed by cathodoluminescence imaging

✍ Scribed by A. Gustafsson; S. Nilsson; L. Samuelson


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
724 KB
Volume
50
Category
Article
ISSN
0169-4332

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