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Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential

✍ Scribed by C. A. Duque; M. E. Mora-Ramos; E. Kasapoglu; H. Sari; I. Sökmen

Book ID
111623831
Publisher
Springer
Year
2011
Tongue
English
Weight
335 KB
Volume
81
Category
Article
ISSN
1434-6036

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In this study, the intense laser-field dependence of intersubband absorption coefficient for 1-2 transition in GaAs/Ga 1Àx Al x As DGQW under the electric field is investigated. The obtained results show that by changing the laser intensity together with the electric field and the well parameters (w