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Integration of wet-chemical processing with low-temperature plasma-assisted processes for the formation of device-quality Si/SiO2 interfaces on Si(111) surfaces

✍ Scribed by T. Yasuda; C.H. Bjorkman; Y. Ma; Z. Lu; G. Lucovsky; U. Emmerichs; C. Meyer; K. Leo; H. Kurz


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
541 KB
Volume
25
Category
Article
ISSN
0167-9317

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