Integration of Pt/Ru Bottom Electrode Structures onto Polycrystalline Silicon by MOCVD
✍ Scribed by E.-S. Choi; J.-B. Park; S.-G. Yoon
- Book ID
- 101370236
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 425 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0948-1907
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✦ Synopsis
Ruthenium buffer layers for platinum bottom electrode deposition onto polycrystalline silicon (poly-Si) were synthesized by dc sputtering and metal±organic (MO) CVD. The electrode structures of Pt/dc sputtered-Ru/poly-Si, annealed for 1 h at 700 C in ambient oxygen, showed severe interdiffusion between Pt and Ru, resulting in rough surface morphologies due to RuO x phases formed on the platinum surface during annealing. On the other hand, those of Pt/MOCVD-Ru/poly-Si on platinum showed smooth surfaces and clear interface morphologies with no second phase formation. Pt/dc sputtered-Ru/poly-Si and Pt/MOCVD-Ru/poly-Si structures annealed at various temperatures in ambient O 2 showed specific contact resistivities of 4.0 10 ±2 X cm 2 and 1.5 10 ±5 X cm 2 , respectively. The Pt/Ru structures integrated on poly-Si by MOCVD are suitable for application in ferroelectric thin films.