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Integration of a TiN barrier layer formed by rapid thermal annealing in a 1 μm CMOS process

✍ Scribed by K.-H. Stegemann; V. Heinig; G. Fontaine; J. Palorec; C. Beyer


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
677 KB
Volume
91
Category
Article
ISSN
0169-4332

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